FBH

Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik

The Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik (FBH) researches electronic and optical components, modules and systems based on compound semiconductors. These devices are key enablers that address the needs of today’s society in fields like communications, energy, health, and mobility. Specifically, FBH develops light sources from the visible to the ultra-violet spectral range: high-power diode lasers with excellent beam quality, UV light sources and hybrid laser modules. Applications range from medical technology, high-precision metrology and sensors to optical communications in space. In the field of microwaves, FBH develops high-efficiency multi-functional power amplifiers and millimeter wave frontends targeting energy-efficient mobile communications, industrial sensing and imaging as well as car safety systems. In addition, compact atmospheric microwave plasma sources operating with economic low-voltage drivers and laser drivers are fabricated for use in a variety of applications. The FBH is a competence center for III-V compound semiconductors and has a strong international reputation. FBH competence covers the full range of capabilities, from design through fabrication to device characterization.

 

Research Program

The FBH develops high-value products and services for its partners in the research community and industry which are tailored precisely to fit individual needs. The institute offers its international customer base complete solutions and know-how as a one-stop agency – from design to ready-to-use modules and prototypes.

Photonics

  • high-power diode lasers: broad area & bars
  • high-brightness & narrowband diode lasers
  • hybrid laser modules (cw & pulsed): from NIR to UV spectral range, e.g. for biophotonics, laser sensors, laser metrology, quantum technology …
  • nitride laser diodes for the blue & UV spectral range
  • short-wave UV LEDs, e.g. for sensors, disinfection, medical & production technology …

III-V Electronics

  • GaN microwave transistors & MMICs
  • advanced power amplifier concepts for the wireless infrastructure
  • integrated circuits with InP HBTs for the 100…500 GHz frequency range (THz electronics)
  • fast drivers for laser diodes
  • compact sources for microwave plasmas
  • GaN power electronics

III-V Technology

  • epitaxy (MOVPE) of GaAs- & GaN-based layer structures for devices
  • (Al)GaN HVPE for bulk crystal growth
  • in situ control techniques for MOVPE & HVPE
  • complete process line 2" - 4" for GaAs, InP, SiC & GaN devices, including laser micro processing
  • InP HBT technology for mm-wave & THz applications, hetero-integrated SiGe-BiCMOS/InP-HBT foundry with IHP
  • mounting & assembling
Director

Prof. Dr. Günther Tränkle

Ph. +49 (0)30 6392-2600

Email

Staff

292

Total budget (in million euro)

37.5

Institutional Funding

14.5

Third-Party Funding

23.0

As of 31 December 2018

Address

Gustav-Kirchhoff-Str. 4, 12489 Berlin